symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r jl r jl 130 maximum junction-to-lead c steady-state 40 50 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja 60 75 c/w maximum junction-to-ambient a steady-state 89 75 c/w maximum junction-to-ambient a steady-state 81 100 maximum junction-to-lead c steady-state 37 45 maximum junction-to-ambient a t 10s r ja 49 parameter: thermal characteristics mosfet typ max w 1.1 0.62 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 1.7 0.96 a 1.2 pulsed forward current b 7 schottky reverse voltage 20 continuous forward current a i f 1.9 a -2.7 pulsed drain current b -15 gate-source voltage 8 continuous drain current a i d -3.4 parameter mosfet schottky drain-source voltage -20 absolute maximum ratings t a =25c unless otherwise noted AON4701 p-channel enhancement mode field effect transistor with schottky diode features v ds (v) = -20v i d = -3.4a (v gs = -4.5v) r ds(on) < 90m ? (v gs = -4.5v) r ds(on) < 120m ? (v gs = -2.5v) r ds(on) < 160m ? (v gs = -1.8v) schottky v ka (v) = 20v, i f = 1a, v f <0.5v@0.5a general description the AON4701 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for dc-dc conversion applications. standard product AON4701 is pb-free (meets rohs & sony 259 specifications). a k g d s g s a a d d k k 1 2 3 4 8 7 6 5 dfn3x2-8l
AON4701 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.63 -1 v i d(on) -15 a 73 90 t j =125c 102 125 95 120 m ? 123 160 m ? g fs 47 s v sd -0.83 -1 v i s -2 a c iss 540 pf c oss 72 pf c rss 49 pf r g 12 ? q g 6.1 nc q gs 0.6 nc q gd 1.6 nc t d(on) 10 ns t r 12 ns t d(off) 44 ns t f 22 ns t rr 21 ns q rr 7.5 nc schottky parameters v f 0.39 0.5 v 0.1 20 c t 34 pf t rr 5.2 10 ns q rr 0.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. schottkyreverse recovery time i f =1a, di/dt=100a/ s schottky reverse recovery charg e i f =1a, di/dt=100a / s ma v r =16v, t j =125c junction capacitance v r =10v forward voltage drop i f =0.5a i rm maximum reverse leakage current v r =16v body diode reverse recovery time body diode reverse recovery charge i f =-3.8a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.8v, i d =-1.5a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-3.4a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-2.5v, i d =-2.5a i s =-1a,v gs =0v v ds =-5v, i d =-3.4a i f =-3.8a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3.8a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.6 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 0. december 2005 alpha & omega semiconductor, ltd.
AON4701 typical electrical and thermal characteristics 165 0 5 10 15 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -8v -3.0v 0 2 4 6 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 50 60 70 80 90 100 110 120 130 140 150 160 0123456 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v i d =-2.5a v gs =-1.8v i d =-1.5a v gs =-4.5v i d =-3.4a 50 100 150 200 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-3.4a 25c 125c alpha & omega semiconductor, ltd.
AON4701 typical electrical and thermal characteristic s 165 0 1 2 3 4 5 02468 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t o n t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =75c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s d c r ds(on) limited 10 s t j(max) =150c t a =25c v ds =-10v i d =-3.4a single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd.
AON4701 typical electrical and thermal characteristics: schottky 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 20 40 60 80 100 0 5 10 15 20 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 0 25 50 75 100 125 150 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (a) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =75c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =0.5a 25c v r =16v 125c t on t p d alpha & omega semiconductor, ltd.
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